Tuesday and Thursday 5:00P –
6:50P
Location: Capital Center, 185th and Walker Rd.
Room: 1306.
Note: Slides and collateral
materials are intended for class use only so they are protected by
password. If you need access, send an
email to Glenn or Scott who will provide you with
username and password.
Note: Exam will be held on June 9, 5:30P – 7:30P in the regular classroom (room 1306, Capital Center).
Glenn Shirley, PSU ECE
Scott Johnson, Intel. Ph. (503) 613-3862
|
Day |
Topics |
Reading |
Problems and Projects |
Slides |
|
|
1 |
Tuesday, March 31, 2009 |
Preliminaries.
Syllabus. Resources. Etc. |
T&T
Chapter 1 Descriptive Statistics |
Problems for Lecture 1 |
|
|
2 |
Thursday, April 02, 2009 |
Reliability
concepts, data synthesis, censoring, distributions, PDF, CDF, simulation. |
T&T
Chapter 2 Reliability Concepts |
Problems
for Lecture 2a |
|
|
3 |
Tuesday, April 07, 2009 |
Basic
statistics, exponential distribution, planning experiments, confidence
limits, “exbit” |
T&T
Chapter 3 Exponential Distribution T&T
Chapter 4: Weibull Distribution T&T
Chapter 5: Normal and Lognormal Distributions |
Problems
for Lecture 3 |
|
|
4 |
Thursday, April 09, 2009 |
Weibull, normal, lognormal
distributions. Synthesis, parameter
extraction, least squares, probit, Weibit. |
T&T Chapter 4, example 4.4, p. 96. |
Problems
for Lecture 4 |
|
|
5 |
Tuesday, April 14, 2009 |
Experimental
Design/Parameter Extraction Optimization |
T&T
Chapter 6: Reliability Data Plotting |
Problems
for Lecture 5 |
|
|
6 |
Thursday, April 16, 2009 |
Acceleration
models |
T&T
Chapter 7: Physical Acceleration Models, JEDEC JEP122E. |
Problems
for Lecture 6 |
|
|
7 |
Tuesday, April 21, 2009 |
MLE,
Likelihood Ratio Test |
Lecture
7 Problems |
||
|
8 |
Thursday, April 23, 2009 |
Defect
Model of Reliability |
Glenn's IRPS 1995 Tutorial paper. |
Lecture
6 Problem Reviews (Kalyan, Satoshi, Hina) |
|
|
9 |
Tuesday, April 28, 2009 |
Problem
Romp. We’ll spend the lecture doing example
problems in preparation for the Exam. |
Lecture
7 Problem Reviews |
||
|
10 |
Thursday, April 30, 2009 |
EXAM |
|
Mid-Term Exam Workbook |
Mid-Term Exam |
|
11 |
Tuesday, May 05, 2009 |
Review
Exam |
|
Mid-Term
Exam Solution |
|
|
12 |
Thursday, May 07, 2009 |
Si Mechanisms I Wearout (Scott) |
|
|
|
|
13 |
Tuesday, May 12, 2009 |
Si Mechanisms II Soft Error (SER) (Norbert Seifert, Intel) |
Baumann, |
Project Strategy Due |
|
|
14 |
Thursday, May 14, 2009 |
III-V Reliability (Bill Roesch, Triquint Fellow). |
Case studies, papers. |
||
|
15 |
Tuesday, May 19, 2009 |
Package Reliability (Glenn) |
Bake JEDEC
22A103C |
||
|
16 |
Thursday, May 21, 2009 |
Quality
Control |
T&T
Chapter 9 |
||
|
17 |
Tuesday, May 26, 2009 |
Si
Mechanisms III (Steve Ramey, Intel) |
Oxide Breakdown (Suehle, Nicollian, Stathis) High-k Dielectric Reliability (Ribes) Bias-Temperature
Instability (Schoeder) |
||
|
18 |
Thursday, May 28, 2009 |
Project Working Session. No lecture scheduled. Glenn and Scott will be in the classroom to help and advise with the projects. |
|
||
|
19 |
Tuesday, June 02, 2009 |
5P
to 6P Project Reviews 6P to 7P Big Picture (Babak Sabi, Intel. VP CQN) |
Project Presentations |
Slides for Lecture 19 |
|
|
20 |
Thursday, June 04, 2009 |
Project
Reviews Exam Prep. |
|
Project
Presentations |
|
|
Exam Week |
Tuesday, June 09, 2009 |
EXAM 5:30P - 7:30P, Location: Room 1306 Capital Center. (Regular classroom.) |
|
|
Exam
Solution |
P. A. Tobias and D. C. Trindade, “Applied Reliability,” 2nd Edition Van Nostrand Reinhold, New York, 1994.
W. Q. Meeker and Luis A. Escobar, “Statistical Methods for Reliability Data” Wiley-Interscience (1998)
W. Nelson, “Applied Life Data Analysis” Wiley, New York, 1982.
W. Nelson, “Accelerated Testing,” Wiley, New York, 1990.
Agostinelli, Marty; ..Johnson, Scott C.; .. Erratic Fluctuations of SRAM Cache Vmin at the 90nm Process Technology Node, IEEE International Electron Devices Meeting, 2005. IEDM.
Baumann, R. C., “Radiation-induced soft errors in advanced semiconductor technologies”, IEEE Transactions on Device and Materials Reliability, Volume 5, Issue 3, pp. 305 – 316, 2005
Biswas, A., et al., “Computing architectural vulnerability factors for address-based structures”, in proceedings of International Symposium on Computer Architecture (ISCA), pp. 532 – 543, 2005
Black, James R., Current Limitations of Thin Film Conductors , 20th Annual Reliability Physics Symposium, March 1982 Page(s):300 – 306.
Black, James R., Electromigration - A Brief Survey and Some Recent Results, IEEE Transactions on Electron Devices Volume 16, Issue 4, Apr 1969 Page(s):338 – 347.
Black, James R., Electromigration Failure Modes in Aluminum Metallization for Semiconductor Devices, Proceedings of the IEEE. Vol 57. no. 9. September 1969.
Black, James R., Electromigration of Al-Si Alloy Films, 16th Annual Reliability Physics Symposium,. April 1978 Page(s):233 – 240.
Black, James R., Mass Transport of Aluminum by Momentum Exchange with Conducting Electrons, 6th Annual Reliability Physics Symposium, held November 6-8, 1967, in Los Angeles.
Black, James R., Physics of Electromigration, 12th Annual Reliability Physics Symposium, 1974. April 1974 Page(s):142 - 149
Galloway, Jesse E.; Miles, Barry M., Moisture Absorption and Desorption Predictions for Plastic Ball Grid Array Packages, IEEE Transactions on Components, Packaging, and Manufacturing Technology - Part A, Vol. 20, No. 3, September 1997 pp 274-279..
Gu, Chen; Kwasnick, Robert F.; Mielke, Neal R.; Monroe, Eric M.; Shirley, C. Glenn, Ambient Use-Condition Models for Reliability Assessment, Proceedings of 44th Annual Reliability Physics Symposium, pp. 299-306, 2006..
Hicks, J. et al. 45nm Transistor Reliability, Intel Technical Journal, 2008.
JEP122E Failure Mechanisms and Models for Semiconductor Devices, JEDEC Publication. March 2009
Kitano, Makoto; Nishimura, Asao; Kawai, Sueo; Nishi, Kunihiko, Analysis of Package Cracking During Reflow Solder Process, International Reliability Physics Symposium 1988. 26th Annual Proceedings. pp 90-95.
Nguyen, H.T., et al., “Chip-Level Soft Error Estimation Method”, Device and Materials Reliability, IEEE Transactions on, Volume 5, Issue 3, Sept. 2005, pp. 365 – 381
Riordan, W. C.; Miller, R.; Sherman, J. M.; Hicks, J., Microprocessor Reliability Performance as a Function of Die Location for a 0.25 micron, Five Layer Metal CMOS Logic Process, 37th Annual International Reliability Physics Symposium, San Diego, California, 1999, pp 1 - 11.
Rzepka, Sven; Banerjee, Kaustav; Meusel, Ekkehard; Hu, Chenming, Characterization of Self-Heating in Advanced VLSI Interconnect Lines Based on Thermal Finite Element Simulation, IEEE Transactions on Components, Packaging, and Manufacturing Technology - Part A, Vol. 21, No. 3, September 1998 pp 406-411.
Seifert, N., et al., “Radiation Induced Clock Jitter and Race”, International Physics Reliability Symposium (IRPS, San Jose, CA), April 2005, pp.215-222
Schafft, Harry; Lechner, James A.; Sabi, Babak; Mahaney, Mike; Smith, Ron C., Statistics for Electromigration Testing, International Reliability Physics Symposium 1988. 26th Annual Proceedings. pp 192-202.
Shirley, Carvin Glenn, A Defect Model of Reliability, From Tutorial Notes, 33rd Annual International Reliability Symposium, Las Vegas, Nevada April 3, 1995, pp. 3.1 - 3.56.
Shirley, Carvin Glenn, Analysis and Synthesis of Correlated Data, Intel Corporation, 2004.
Shirley, Carvin Glenn, New Generation HAST System, Intel Corporation, 1994.
Shirley, Carvin Glenn, Steady-state temperature profiles in narrow thin-film conductors, American J. Appl. Phys. 57 (3), 1 February 1985.
Shirley, Carvin Glenn; Bose, Subroto; Blish II, Richard C., Application of Test Chips in Packaging and Assembly, University of California, Berkeley, 1986.
Shirley, Carvin Glenn; Shell-DeGuzman, Melissa, Moisture-Induced Gold Bond Degradation of Polyimide-Passivated Devices in Plastic Packages, Proceedings of 31st Annual Reliability Physics Symposium, pp. 217-226, 1993..
Weibull, Waloddi, A Statistical Distribution of Wide Applicability, Journal of Applied Mechanics, 1951 pp. 293-297
Oxide Breakdown
• John S. Suehle, “Ultrathin Gate Oxide Reliability: Physical Models, Statistics, and Characterization,” IEEE TED, vol. 49, no. 6, June 2002 p. 958.
• Paul E. Nicollian, Anand T. Krishnan, Cathy A. Chancellor, Rajesh B. Khamankar, Srinivasan Chakravarthi, Chris Bowen, and Vijay K. Reddy, “The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown,” IRPS 2007 p. 197.
• James H. Stathis, “Physical and Predictive Models of Ultrathin Oxide Reliability in CMOS Devices and Circuits,” IEEE TDMR, vol. 1, no. 1, march 2001. p.43.
High-K
• G. Ribes, J. Mitard, M. Denais, S. Bruyere, F. Monsieur, C. Parthasarathy, E. Vincent, and G. Ghibaudo, “Review on High-k Dielectrics Reliability Issues,” IEEE TDMR, vol. 5, no. 1, march 2005 p. 5.
Bias-Temperature Instability (BTI)
• Dieter K. Schroder and Jeff A. Babcock, “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing,” JAP volume 94, n.1, July 1, 2003, pp. 1-18.
International Technology Roadmap for Semiconductors (ITRS, 2007)
NIST Engineering Statistics Handbook.
Tezzaron Semiconductor – “Soft Errors in Electronic Memory – A White Paper”
Reliability is a critical element in the performance and cost optimization for components and systems. It can even determine the feasibility of a product. So it is important to have a good understanding of methods used to specify, design-in, validate, and control reliability of electronic components and systems at all stages of the product lifecycle from design to manufacturing. After establishing fundamental concepts and methods, we will cover examples of design-for-reliability features, silicon and package failure mechanisms, test technologies, quality control methods, and product specification and qualification examples. The mainly statistical methods utilize simple tools such as hand calculators, and Excel. Also covered are system-level reliability design methods, manufacturing quality control methods applied to reliability, and the role of industry standards.
Elementary statistics, including probability, descriptive statistics, and statistical distributions.
Experience with Excel, particularly built-in statistical functions and VBA.
Reliability Models. Mastery of formal theory needed to model reliability of components and systems. Includes reliability statistics, distributions, acceleration, scaling models.
Parameter Extraction. Methods to extract reliability model parameters from data. Understand variability and confidence limits of figures of merit used in decision-making. Design experiments to extract parameters with prescribed confidence levels. Particular emphasis on simulation methods.
Reliability Prediction. Use of reliability models to compute indicators and figures of merit. Analytical and simulation methods.
Mechanisms. Understand the most important component reliability mechanisms – silicon, III/V, package. Thermally-accelerated, voltage-accelerated, thermo-mechanical, moisture, soft error. Defect, random, wearout.
System Reliability. Beyond MIL HDBK 217 to platform qual – integration risks.
Product Qualification. Understand pros/cons of approaches to product qualification. Stress-based qual, knowledge-based qual, “physics of failure”-based qual. Role of industry standards in product qualification.